PROBLEM 095 · Medium · Settling against charge injection
Switch On
An NMOS sampling switch
The problem
Build a sampling switch from one NMOS: its drain on “in” (held at 0.9 V by the test bench), its source on “out” (a 1 pF sampling capacitor to ground, also supplied by the test bench) and its gate on “clk” (a 0 to 1.8 V clock pulse from the test bench). The capacitor starts at 0 V.
While the clock is high the switch is a resistor Ron and the capacitor charges with a time constant Ron·C. When the clock falls, some of the channel charge flows into the capacitor and a gate–drain overlap capacitance couples the falling clock: the held voltage is slightly off. A wider switch has a smaller Ron but a larger charge to dump: you must pick the width that does both jobs.
The test bench
- Supply: VDD = 1.8 V.
- The test bench holds “in” at 0.9 V, drives “clk” high from 1 ns to 4 ns, and hangs a 1 pF capacitor from “out” to ground, starting at 0 V. It measures the settling time to within 1 mV of 0.9 V after the clock rises, and the step of “out” when the clock falls.
Numbers to hit
- Settling time to 1 mV at most 1.5 ns
- Step when the clock falls at most 40 mV
Design it yourself
Draw the circuit on a schematic canvas, size every transistor, and see it simulated in your browser with ngspice and the SkyWater SKY130 models. Every transistor lights up green, gold or red by operating region as you move the sliders.
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